Open AccessDielectric and interface characteristics of SrTiO3 with a MIS structure
Author(s) -
Jianzhong Ma,
Jie Sun,
Xiangjian Meng,
Tie Lin,
Shi Fu-Wen,
Junhao Chu
Publication year - 2005
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
ISSN - 1000-3290
DOI - 10.7498/aps.54.1390
Subject(s) - materials science , dielectric , crystallinity , dissipation factor , crystallite , insulator (electricity) , metal , composite material , condensed matter physics , optoelectronics , metallurgy , physics
SrTiO3 (STO) films were deposited onto the ptype Si substrates by metalorganic decomposition (MOD) technique. The dielectric and interface characteristics of STO with a metalinsulatorsemiconductor(MIS) structure were investigated. The results showed that the dielectric constant was about 105 and the dissipation factor was lower than 001 for our STO films at a frequency of 10kHz. The excellent dielectric properties were attributed to the polycrystalline structure with good crystallinity. The fixed charge density Nf and the interfacetrap density Dit were calculated to be about 15×1012cm-2 and (14—35)×1012cm-2eV-1, respectively. Both Nf and Dit were mainly connected with an interface layer with low dielectric constant formed at the interface of Si/STO.