Open AccessMechanism of nodule growth in ion beam sputtering films
Author(s) -
Dongping Zhang,
Qi Huang,
Shao Jian-da,
Rui-Ying Fan,
Fan Zheng-Xiu
Publication year - 2005
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.54.1385
Subject(s) - nucleation , materials science , sputtering , diffusion , thin film , scanning electron microscope , substrate (aquarium) , chemical physics , ion , ion beam , zirconium , optics , beam (structure) , nanotechnology , composite material , chemistry , thermodynamics , metallurgy , physics , oceanography , organic chemistry , geology
Zirconium singlelayer films were prepared by ion beam sputtering method. By using a novel designed substrate holder in preplanting seeds method, the growth process of the nodular defects in thin films was studied. With the help of high resolution optical microscopy and electron scanning microcopy, the phenomenon that the nodules nucleation exhibits fractal characters in their initial growth period was observed. By using the molecular dynamics theory and diffusion limited aggregation model of film growth, the fractal phenomenon of the nodule nucleation was well explained.