Open AccessDegradation and physical mechanism of NBT in deep submicron PMOSFET's
Author(s) -
Liu Hong Xia,
Zheng Feng,
Yue Hao
Publication year - 2005
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.54.1373
Subject(s) - degradation (telecommunications) , materials science , mechanism (biology) , optoelectronics , mosfet , engineering physics , computer science , electrical engineering , transistor , physics , telecommunications , voltage , engineering , quantum mechanics
This paper investigates the dependence of current and voltage characterizations on stress time in deep submicron PMOSFET's before and after negative bias temperature (NBT) stress, we mainly focus on the threshold voltage shift under NBT stress. It is experimentally demonstrated that the electrochemical reactions at the interface between gate oxide and substrate and the diffusion of hydrogen related species in the oxide are the major causes of the NBT in PMOSFET's. PMOSFET degradation caused by NBT depends on the balance of reactionlimited and diffusionlimited mechanisms.