Open AccessGrowth and characteristics of Ge on Ru(0001)
Author(s) -
Fangdong Hu,
Hanjie Zhang,
Lyu Bin,
Yong-Sheng Tao,
Haiyang Li,
Bao Shi-Ning,
He Pi-Mo,
X. S. Wang
Publication year - 2005
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.54.1330
Subject(s) - x ray photoelectron spectroscopy , scanning tunneling microscope , binding energy , germanium , substrate (aquarium) , materials science , wetting layer , photoemission spectroscopy , analytical chemistry (journal) , crystallography , layer (electronics) , wetting , spectroscopy , atomic physics , chemistry , silicon , nanotechnology , physics , nuclear magnetic resonance , optoelectronics , oceanography , chromatography , quantum mechanics , geology , composite material
Scanning tunneling microscopy (STM) and x_ray photoemission spectroscopy (XPS) studies of germanium growth on Ru(0001) were carried out. STM measurements showed a typical Stranski_Krastanov growth mode of Ge on Ru(0001), i.e. first atomic wetting layer is formed in the submololayer range, and the formation of islands on top of a flat first layer occurs for subsequent layers. XPS measurements showed a weak interaction between Ge and the substrate of Ru(0001). The Ru 3d5/2 and Ru 3d3/2 corelevels of Ru(0001) are located at 2798 and 2840 eV in binding energy respectively. Upon Ge growth, up to a thickniss of about 20 atomic layers, the Ru 3d corelevels shift downward in binding energy by an amount of about 02 eVwhile the Ge 3d corelevel shift upward in binding energy from the Ge low coverage limit of 289 eV to 290 eVwith a relative change of 01 eV.