Open AccessFullerene-like nano-crystalline CNx films and its characteristics of field electron emission
Author(s) -
Lan Zhang,
Hongjuan Ma,
Huijun Li,
Shie Yang,
Ning Yao,
Huanling Hu,
Binglin Zhang
Publication year - 2004
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.53.883
Subject(s) - field electron emission , materials science , x ray photoelectron spectroscopy , analytical chemistry (journal) , raman spectroscopy , scanning electron microscope , thin film , chemical vapor deposition , fullerene , field emission microscopy , electron , diffraction , nanotechnology , nuclear magnetic resonance , optics , chemistry , physics , chromatography , quantum mechanics , composite material , organic chemistry
CNx films were prepared by using microwave plasma-enhanced chemical vapor phase deposition. As-deposited films were analyzed by x-ray photoelectron spectroscopy, x-ray diffraction, scanning electron microscopy and Raman spectroscopy. Field electron emission characteristics of thin films were studied. Experimental results indicate that the film structure and properties of the field electron emission are related to flow ratio of N2 to H2 while the flow rate of CH4 was kept at 8 sccm. When the flow ratio of N2 to H2 was 50/50 sccm, the obtained film had a nano-crystalline graphitic structure with curved basal planes (fullerene-like structure) and excellent properties of field electron emission. The turn-on field decreased to 1.1 V/μm. At an electric field of 5.9V/μm, the average current density was 70μA/cm2 and emission sites density was larger than 1×104cm-2.