Photoluminescence centers and shift of ZnO films deposited by rf magnetron sputtering | Zendy

Li Huo-Quan | Zendy; Zhaoyuan Ning | Zendy; Cheng Shan-Hua | Zendy; Jiang Mei-Fu | Zendy

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Photoluminescence centers and shift of ZnO films deposited by rf magnetron sputtering

Author(s) -

Li Huo-Quan,

Zhaoyuan Ning,

Cheng Shan-Hua,

Jiang Mei-Fu

Publication year - 2004

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.53.867

Subject(s) - photoluminescence , materials science , sputter deposition , sputtering , optoelectronics , cavity magnetron , acceptor , wavelength , zinc , analytical chemistry (journal) , thin film , nanotechnology , condensed matter physics , chemistry , physics , metallurgy , chromatography

ZnO films deposited by rf magnetron sputtering with different stoichimetries were made by varing Ar/O2 flow rate during the depositions, and annealed in vacuum. The photoluminescence measurements show that the films have strong blue emission. As O2 gas flow decreases, the blue emission peak moves to long wavelength side. The blue emission may correspond to the electron transition from the bottom of the conduction band to the acceptor level composed of zinc defects.

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