Open AccessStudy on the cell structure in semi-insulation gallium arsenide
Author(s) -
Xu Yue-Sheng,
Lei Tang,
Haiyun Wang,
Caichi Liu,
Hao Jing-Chen
Publication year - 2004
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.53.651
Subject(s) - materials science , gallium arsenide , grain boundary , transmission electron microscopy , condensed matter physics , etching (microfabrication) , arsenide , gallium , isotropic etching , dislocation , cell structure , crystallography , microstructure , optoelectronics , composite material , nanotechnology , physics , chemistry , layer (electronics) , biological system , metallurgy , biology
Defects constructing a netlike cell structure in the 3-inch semi-insulating gallium arsenide (SI-GaAs) single crystal were studied by methods of chemical etching, x-ray anomalous transmission topography (XRT) and transmission electron microscope (TEM). The nature and the formation mechanism of these structures were analyzed. It is assumed that the cell structures are made by the clusters of small angle grain boundary caused by the movement and interaction of high density of dislocations. and the cell wall is the typical small angle grain boundary. The phase difference among the small angle grain boundaries increases with the density of dislocations.