Open AccessCharacterization of Mg-doped GaN
Author(s) -
Feng Qian,
Yue Hao,
Zhang Xiao-Ju,
Yulong Liu
Publication year - 2004
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.53.626
Subject(s) - photoluminescence , materials science , doping , raman spectroscopy , raman scattering , acceptor , substrate (aquarium) , metalorganic vapour phase epitaxy , characterization (materials science) , optoelectronics , composite material , condensed matter physics , nanotechnology , optics , layer (electronics) , physics , oceanography , epitaxy , geology
The properties of GaN∶Mg films grown by MOCVD on SiC substrate were studied using SEM, Raman scattering and photoluminescence spectra. The results indicate that some Mg atoms substitute Ga to become acceptors, while most of them exist as Mg interstitials(Mgi) and aggregate at defects and dislocations to reduce the tensile stress, hence a great deal of cracks were introduced during decreasing temperature process for inhomogeneous strain distribution. On the other hand, the incorporation of Mg aggravates disorder and debases the film quality. Finally, the room temperature photoluminescence measurements show the blue band attributed to DAP-type transitions from a deep donor(MgGaVN) to a shallow acceptor(MgGa).