Open AccessThe change of photo-induced resistivity properties in La2/3Ca1/3MnO3 thin films
Author(s) -
Shilin Wang,
Changle Chen,
Yuelong Wang,
Jin Kusaka,
Yongcang Wang,
Ren Ren,
Z.M. Song,
Xiao Yuan
Publication year - 2004
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.53.587
Subject(s) - electrical resistivity and conductivity , manganite , materials science , thin film , laser , condensed matter physics , excited state , perovskite (structure) , biasing , optics , conductivity , optoelectronics , ferromagnetism , physics , voltage , atomic physics , nanotechnology , chemistry , quantum mechanics , crystallography
Photo-induced resistivity change p has been studied in perovskite manganite La2/3Ca1/3MnO3 thin films with a continous wave laser and modulated laser pulses in this paper. Experimental results show that in the sample films, the maximum of photo-induced resistivity changeΔR/Rmax can reach 43.5%,which is a very exciting figure in this research field. Modulated laser pulse induced signal intensity has a highly nonlinear relation with the applied current and temperature. The maximum of photo-induced resistivity increase is a second power function of the applied current, while the temperature at which the maximum appears is proportional to the bias current. There exist an optimal bias current and a temperature for optical response in this film. These results are attributed to the optical excited eg↓ carriers and polarons.