Open AccessThe effect of oxygen pressure on the dielectric properties of pulsed laser deposited La-doped PbTiO3 thin film*
Author(s) -
Hu Da-Zhi,
Shen Rong
Publication year - 2004
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.53.4405
Subject(s) - dielectric , materials science , thin film , pulsed laser deposition , microstructure , oxygen , doping , oxygen pressure , dielectric loss , analytical chemistry (journal) , deposition (geology) , composite material , optoelectronics , nanotechnology , chemistry , paleontology , organic chemistry , biology , chromatography , sediment
Pb0.72La0.28TiO.3(PLT28) thin films have been prepared on Pt/Ti/SiO2/Si substrates by pulsed laser deposition under various oxygen pressu re. Experimental study indicated that the oxygen pressure exerts a strong impact on the microstructure and the dielectric properties of the thin films. The film deposited under an oxygen pressure of 2Pa had a larger dielectric constant an d kept a low dielectric loss. At 10kHz frequency, the dielectric constant was approximately 852 and the dielectric loss was 0.0110 Meanwhile, we found that other La- modified PbTiO3 films have the same relation between dielectric con stant and pressure as the above. Possible explanation is given for this.