Open AccessMeasurement and analysis of the pulsed magnetic field phase lag in the ceramic case*
Author(s) -
Huiyong Hu,
Heming Zhang,
Xianying Dai,
Lü Yi,
Bin Shen,
Wei Wang,
Jiang Tao,
Wang Xi-Yuan
Publication year - 2004
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.53.4314
Subject(s) - materials science , doping , condensed matter physics , charge carrier density , quantum well , semiconductor , layer (electronics) , phase (matter) , optoelectronics , physics , composite material , optics , quantum mechanics , laser
In this paper, static state and quasistatic state models of quantum well channel hole sheet density of SiGe pmetaloxidesemiconductor with δ doping layer are established and analyzed. The relations between hole sheet density and δ dopinglayer concentration, between holesheetdensity and undoping layer hickness at static state are also discussed, and the relations of the threshold voltage to the δ doping layer concentration, the quantum well channel hole sheet density and the thickness of the undoping layer are discussed. At last, the relation of the quantumwell channel hole sheet density to gate voltage for the quasistatic state is discussed.