Open AccessThe formation of highdensity uniform silicon nanocrystalson insulator substrate and their surface morphology*
Author(s) -
Xin Li,
Xiaowei Wang,
Xuefei Li,
Qibo Feng,
Jiaxin Mei,
Wei Li,
Xu Jun,
Huang Xin-Fan,
Kunji Chen
Publication year - 2004
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.53.4293
Subject(s) - materials science , nucleation , silicon , fluence , amorphous silicon , substrate (aquarium) , annealing (glass) , amorphous solid , chemical vapor deposition , nanocrystalline silicon , nanotechnology , crystal (programming language) , optoelectronics , laser , composite material , crystalline silicon , optics , crystallography , chemistry , programming language , physics , oceanography , organic chemistry , computer science , geology
The method of pulsed laser induced nucleation combined with furnace annealing for crystal growth is successfully performed to fabricate uniform silicon nanocrys tals with high density from initial hydrogen amorphous silicon(aSi:H) ultra th in film, deposited by a plasmaenhanced chemical vapor deposition system. Ato mic force microscopy was employed to characterize the morphological modifications of samples. It is shown that the size of ncSi is increased as the laser fluence increased. Nano crystal silicon dots with lateral sizes of10 nm in dia meter, size deviation less than 20% and with surface density about 10.11/cm2 are obtained. The growth mechanism of ncSi dots is also briefly discus sed.