Influence of the potential in n-type DBR on threshold in vertical-cavity surface-emitting lasers | Zendy

Hongdong Zhao | Zendy; 宋殿友 Song Dianyou | Zendy; Zhifeng Zhang | Zendy; Sun Ji ng | Zendy; Mei Sun | Zendy; Wu Yi | Zendy; Wen Xing-Rao | Zendy

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Influence of the potential in n-type DBR on threshold in vertical-cavity surface-emitting lasers

Author(s) -

Hongdong Zhao,

宋殿友 Song Dianyou,

Zhifeng Zhang,

Sun Ji ng,

Mei Sun,

Wu Yi,

Wen Xing-Rao

Publication year - 2004

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.53.3744

Subject(s) - laser , optoelectronics , materials science , coupling (piping) , surface (topology) , optics , field (mathematics) , semiconductor laser theory , vertical cavity surface emitting laser , charge carrier density , physics , doping , geometry , mathematics , pure mathematics , metallurgy

In this paper, a simulation software with a direct coupling in quasi-three-di mensions for the gain-waveguide vertical-cavity surface-emitting lasers has b een realized. The electrical field, carrier density, optical-field and temperature distributions in the vertical-cavity surface-emitting lasers are given. The proper threshold characteristics are shown only when the potentia ls in the p-type and n-type DBR layers are studied together.

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