Open AccessInfluence of the potential in n-type DBR on threshold in vertical-cavity surface-emitting lasers
Author(s) -
Hongdong Zhao,
Dian Song,
Zhifeng Zhang,
Sun Ji ng,
Mengtao Sun,
Wu Yi,
Wen Xing-Rao
Publication year - 2004
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.53.3744
Subject(s) - laser , optoelectronics , materials science , coupling (piping) , surface (topology) , optics , field (mathematics) , semiconductor laser theory , vertical cavity surface emitting laser , charge carrier density , physics , doping , geometry , mathematics , pure mathematics , metallurgy
In this paper, a simulation software with a direct coupling in quasi-three-di mensions for the gain-waveguide vertical-cavity surface-emitting lasers has b een realized. The electrical field, carrier density, optical-field and temperature distributions in the vertical-cavity surface-emitting lasers are given. The proper threshold characteristics are shown only when the potentia ls in the p-type and n-type DBR layers are studied together.