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p-n GaInP2/GaAs tandem solar cells*
Author(s) -
Mingbo Chen,
Cui Rongqiang,
Liangxing Wang,
Zhongwei Zhang,
Jianfeng Lu,
Chi Wei-Ying
Publication year - 2004
Publication title -
acta physica sinica
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.53.3632
Subject(s) - tandem , materials science , photovoltaic system , chemical vapor deposition , optoelectronics , energy conversion efficiency , electrical engineering , composite material , engineering
This paper reports the study on p-n GaInP2/GaAs tandem cells. The cell samples were produced by metal-organic chemical vapor deposition at a low gas pressure. In order to optimize the device configuration, numerical modeling has been performed for the impacts of a fieldaided collection on the performances of the top cells. On the basis of modeling results, a modified configuration of top cells is introduced, using p+-p—n—n+ structure instead of p+n structure. This modification has brought about much improved photovoltaic performance of the top and tandem cells, with the conversion efficiency Eff=14.26% and 23.82% (AMO, 25℃, 2×2cm2), respectively.

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