Open AccessIn-situ photo-modulated reflectance study on the interface of Al and GaAs surface quantum well
Author(s) -
Yuan Xian-Zhang,
Miao Zhong-Lin
Publication year - 2004
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.53.3521
Subject(s) - in situ , reflectivity , materials science , interface (matter) , surface (topology) , optoelectronics , optics , physics , composite material , geometry , mathematics , capillary number , capillary action , meteorology
We have studied the optical properties of the interface of Al and GaAs surface q uant um well by insitu photoreflectance (PR) spectroscopy in a molecular beam e pitax y (MBE) system. The intermixing of Al and GaAs surface quantum wells forms an AlxGa1-xAs barrier layer on GaAs, which would shift the inte r_band transition peaks of the GaAs quantum well. Based on the calculation using effective mass approximate method, we fi nd that the intermixing length is 0.5nm, which is an important parameter in sem iconductor technology.