Open AccessElectronic structure of the stable GaAs(2 5 1 1) surface
Author(s) -
Yu Jia,
Shie Yang,
Bo Ma,
Xinjian Li,
Xing Hu
Publication year - 2004
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.53.3515
Subject(s) - materials science , quantum well , x ray absorption spectroscopy , spectroscopy , effective mass (spring–mass system) , molecular beam epitaxy , condensed matter physics , electronic structure , surface (topology) , layer (electronics) , gallium arsenide , absorption spectroscopy , optoelectronics , physics , optics , nanotechnology , epitaxy , laser , geometry , mathematics , quantum mechanics
We have studied the optical properties of the interface of Al and GaAs surface q uant um well by insitu photoreflectance (PR) spectroscopy in a molecular beam e pitax y (MBE) system. The intermixing of Al and GaAs surface quantum wells forms an AlxGa1-xAs barrier layer on GaAs, which would shift the inte r_band transition peaks of the GaAs quantum well. Based on the calculation using effective mass approximate method, we fi nd that the intermixing length is 0.5nm, which is an important parameter in sem iconductor technology.