Calculation of acoustoelectric current in a quasi-one-dimensional electron channel | Zendy

Gao Hong-Lei | Zendy; Ling Li | Zendy; Jie Gao | Zendy

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Calculation of acoustoelectric current in a quasi-one-dimensional electron channel

Author(s) -

Gao Hong-Lei,

Ling Li,

Jie Gao

Publication year - 2004

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.53.3504

Subject(s) - wkb approximation , current (fluid) , surface acoustic wave , heterojunction , electron , channel (broadcasting) , condensed matter physics , physics , biasing , gate voltage , power (physics) , voltage , materials science , computational physics , optoelectronics , acoustics , transistor , telecommunications , computer science , quantum mechanics , thermodynamics

An acoustoelectric current is induced by a surface acoustic wave (SAW) launched along the quasionedimensional electron channel defined in a GaAs/Al x Ga1-x As heterostructure by split gates. Using the WKB approxima tion, the acoust oelectric current is calculated when only one electron is captured in the quantu m well. We discussed the effect on acoustoeletric current caused by SAW power, S AW frequency, gate voltage and sourcedrain bias.

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