Open AccessCalculation of acoustoelectric current in a quasi-one-dimensional electron channel
Author(s) -
Gao Hong-Lei,
Ling Li,
Jie Gao
Publication year - 2004
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.53.3504
Subject(s) - wkb approximation , current (fluid) , surface acoustic wave , heterojunction , electron , channel (broadcasting) , condensed matter physics , physics , biasing , gate voltage , power (physics) , voltage , materials science , computational physics , optoelectronics , acoustics , transistor , telecommunications , computer science , quantum mechanics , thermodynamics
An acoustoelectric current is induced by a surface acoustic wave (SAW) launched along the quasionedimensional electron channel defined in a GaAs/Al x Ga1-x As heterostructure by split gates. Using the WKB approxima tion, the acoust oelectric current is calculated when only one electron is captured in the quantu m well. We discussed the effect on acoustoeletric current caused by SAW power, S AW frequency, gate voltage and sourcedrain bias.