Open AccessHighly deep levels in solid C70/p-GaAs structures
Author(s) -
Ran Guang-Zhao,
Yuan Chen,
Chen Kai-Mao,
Xiaolan Zhang,
Hongfei Liu
Publication year - 2004
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.53.3498
Subject(s) - wkb approximation , current (fluid) , heterojunction , surface acoustic wave , condensed matter physics , gate voltage , materials science , optoelectronics , biasing , voltage , electron , channel (broadcasting) , physics , optics , transistor , telecommunications , quantum mechanics , computer science , thermodynamics
An acoustoelectric current is induced by a surface acoustic wave (SAW) launched along the quasionedimensional electron channel defined in a GaAs/Al x Ga1-x As heterostructure by split gates. Using the WKB approxima tion, the acoust oelectric current is calculated when only one electron is captured in the quantu m well. We discussed the effect on acoustoeletric current caused by SAW power, S AW frequency, gate voltage and sourcedrain bias.