Highly deep levels in solid C70/p-GaAs structures | Zendy

Ran Guang-Zhao | Zendy; Yuan Chen | Zendy; CHEN KAI-MAO | Zendy; Xiaolan Zhang | Zendy; Liu Hongfei | Zendy

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Highly deep levels in solid C70/p-GaAs structures

Author(s) -

Ran Guang-Zhao,

Yuan Chen,

CHEN KAI-MAO,

Xiaolan Zhang,

Liu Hongfei

Publication year - 2004

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.53.3498

Subject(s) - wkb approximation , current (fluid) , heterojunction , surface acoustic wave , condensed matter physics , gate voltage , materials science , optoelectronics , biasing , voltage , electron , channel (broadcasting) , physics , optics , transistor , telecommunications , quantum mechanics , computer science , thermodynamics

An acoustoelectric current is induced by a surface acoustic wave (SAW) launched along the quasionedimensional electron channel defined in a GaAs/Al x Ga1-x As heterostructure by split gates. Using the WKB approxima tion, the acoust oelectric current is calculated when only one electron is captured in the quantu m well. We discussed the effect on acoustoeletric current caused by SAW power, S AW frequency, gate voltage and sourcedrain bias.

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