Open AccessStructural and optical studies of MgxZn1-xO films grown on sapphire
Author(s) -
Naibo Chen,
Huizhen Wu,
Qiu Dong-Jiang
Publication year - 2004
Publication title -
acta physica sinica
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.53.311
Subject(s) - wurtzite crystal structure , materials science , sapphire , absorption edge , photoluminescence , lattice constant , thin film , ultraviolet , electron beam physical vapor deposition , analytical chemistry (journal) , epitaxy , electron diffraction , crystal structure , diffraction , molecular beam epitaxy , absorption spectroscopy , optoelectronics , band gap , optics , crystallography , nanotechnology , chemistry , laser , physics , chromatography , layer (electronics) , zinc , metallurgy
Low-temperature epitaxy of MgxZn1-xO thin films is achieved on sapphire substrates by the reactive electron beam evaporation. X-ray diffraction (XRD) and energy dispersive x-ray (EDX) analyses of the films demonstrate that the structure of MgxZn1-xO depends upon the concentration of Mg in the films. With the increase of Mg concentration, the structure of MgxZn1-xO changes from the wurtzite crystal structure of ZnO to the cubic one with lattice constant similar to that of MgO. By the measurements of UV-visible transmission and ultraviolet photoluminescence spectra of the MgxZn1-xO films, it is found that the absorption band edge of MgxZn1-xO is blue shifted obviously with the increase of Mg concentration, indicating the absorption band edge of MgxZn1-xO becomes wider. However, the lattice mismatch between cubic MgxZn1-xO film and MgO is small (0.16%).
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