Open AccessResponse characteristic of femtosecond LT-GaAs photoconductive switches at different voltage bias
Author(s) -
Li Deng,
Liu Ye-Xin,
Shou Qian,
Wu Tian-Hong,
Tianshu Lai,
Jin Wen,
Lin Wang
Publication year - 2004
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.53.3010
Subject(s) - photocurrent , photoconductivity , biasing , materials science , optoelectronics , voltage , femtosecond , ionization , atomic physics , optics , physics , laser , ion , quantum mechanics
The response characteristic of a LTGaAs photoconductive switch formed in a cop lanar waveguide at different voltage bias is studied with photocurrent autocorre lation measurement technique. The experimental results show that the switching t ime increases from 200fs to 750fs, when the bias voltage ascends from 0.5×104 to 9.5×104 V/cm. This phenomenon is attributed to the increase of carr ier capture time arising from the potential barrier lowering (FrenkelPoole eff ect) and the fieldenhanced thermal ionization.