Response characteristic of femtosecond LT-GaAs photoconductive switches at different voltage bias | Zendy

Li Deng | Zendy; Yexin Liu | Zendy; Qian Shou | Zendy; Wu Tian-Hong | Zendy; Lai Tian-Shu | Zendy; Wen Jin-Hui | Zendy; Lin Wei-Zhu | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Response characteristic of femtosecond LT-GaAs photoconductive switches at different voltage bias

Author(s) -

Li Deng,

Yexin Liu,

Qian Shou,

Wu Tian-Hong,

Lai Tian-Shu,

Wen Jin-Hui,

Lin Wei-Zhu

Publication year - 2004

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.53.3010

Subject(s) - photocurrent , photoconductivity , biasing , materials science , optoelectronics , voltage , femtosecond , ionization , atomic physics , optics , physics , laser , ion , quantum mechanics

The response characteristic of a LTGaAs photoconductive switch formed in a cop lanar waveguide at different voltage bias is studied with photocurrent autocorre lation measurement technique. The experimental results show that the switching t ime increases from 200fs to 750fs, when the bias voltage ascends from 0.5×104 to 9.5×104 V/cm. This phenomenon is attributed to the increase of carr ier capture time arising from the potential barrier lowering (FrenkelPoole eff ect) and the fieldenhanced thermal ionization.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research