z-logo
open-access-imgOpen Access
Response characteristic of femtosecond LT-GaAs photoconductive switches at different voltage bias
Author(s) -
Li Deng,
Liu Ye-Xin,
Shou Qian,
Wu Tian-Hong,
Tianshu Lai,
Jin Wen,
Lin Wang
Publication year - 2004
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.53.3010
Subject(s) - photocurrent , photoconductivity , biasing , materials science , optoelectronics , voltage , femtosecond , ionization , atomic physics , optics , physics , laser , ion , quantum mechanics
The response characteristic of a LTGaAs photoconductive switch formed in a cop lanar waveguide at different voltage bias is studied with photocurrent autocorre lation measurement technique. The experimental results show that the switching t ime increases from 200fs to 750fs, when the bias voltage ascends from 0.5×104 to 9.5×104 V/cm. This phenomenon is attributed to the increase of carr ier capture time arising from the potential barrier lowering (FrenkelPoole eff ect) and the fieldenhanced thermal ionization.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here