Open AccessThe fabrication and properties of InAs/GaAs columnal islands
Author(s) -
Tao Zhu,
Bo Xu,
Jun He,
Zhao Feng-Ai,
Chunyu Zhang,
Erqing Xie,
Fengqi Liu,
Zhanguo Wang
Publication year - 2004
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.53.301
Subject(s) - materials science , wavelength , molecular beam epitaxy , quantum dot , optoelectronics , substrate (aquarium) , layer (electronics) , deposition (geology) , fabrication , atomic force microscopy , epitaxy , optics , nanotechnology , physics , medicine , alternative medicine , pathology , paleontology , oceanography , sediment , geology , biology
A columnal islands system, which was composed of three layers of self-assembled InAs/GaAs quantum dots (QDs), has been fabricated by solid-source molecular beam epitaxy (MBE) through S-K mode on a (100) semi-insulating GaAs substrate. The effects of the thickness of GaAs space layer, the growth interruption time and the amount of InAs deposition on the emission wavelength of columnal islands were presented. The image of atomic force microscopy (AFM) indicated the columnal islands with high uniformity in size and shape. At room temperature, the emission wavelength of columnal islands with different effective heights was achieved 1.32 and 1.4μm; however, the emission wavelength of single-layer QDs with normal height was just 1.1μm. It provides a useful and intuitive approach to artificially control the emission wavelength of a QD material system.