Open AccessStudy of 3C-SiC and 4H-SiC films deposited using RF sputtering method
Author(s) -
Lin Hong-Feng,
Erqing Xie,
Zhuang Ma,
Jun Zhang,
Peng Ai-hua,
Deyan He
Publication year - 2004
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.53.2780
Subject(s) - materials science , sputtering , optoelectronics , silicon carbide , thin film , nanotechnology , composite material
SiC films were deposited on Si(111) substrates by radio-frequency (RF) sputtering method. High-resolution x-ray diffraction and infrared (IR) absorption spectroscopy were used to investigate the composition and bonding structures of the SiC films. The analysis indicated that the samples deposited at high temperatures (800℃) were found to consist of 4HSiC or 3CSiC crystallites, while the amorphous films were obtained at lower temperatures. IR spectra suggested that the main absorption property was caused by Si—Cb ondings. Furthermore, atomic force microscopy was used to examine the surface morphology of the SiC films and the field emission properties of the films were studied.