Open AccessThe study of I-V characteristics of single-electron triple-barrier tunnel-junction
Author(s) -
Yanxin Liu,
Yongchang Wang,
Du Shao-Yi
Publication year - 2004
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.53.2734
Subject(s) - coulomb barrier , classification of discontinuities , coulomb , electron , tunnel junction , master equation , physics , condensed matter physics , quantum tunnelling , coulomb blockade , electric potential energy , energy (signal processing) , atomic physics , quantum mechanics , voltage , quantum , mathematical analysis , mathematics , transistor
The master equation of the single-electron triple-barrier tunnel-junction(TBTJ) model is developed based on the orthodox theory. The steady distribution of electrons on the Coulomb islands is obtained with the linear system of equations method and the I-V curves through the simulation method are presented in this paper. Discontinuities of the slope of the curve at the flat-form of Coulomb staircase compared to double barrier tunnel-junction system, which is caused by the change of the electron numbers on the second Coulomb island, are found. The system temperature requirement can be reduced in the TBTJ system, and the maximum temperature at which Coulomb staircase can be resolved is estimated using the energy spacing at the Fermi energy.