Open AccessDetermination of bandgap in SiGe strained layers using a pn heterojunction C-V
Author(s) -
Bin Shen,
Xianying Dai,
Heming Zhang
Publication year - 2004
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.53.235
Subject(s) - heterojunction , materials science , band gap , optoelectronics , conduction band , classification of discontinuities , valence band , silicon germanium , silicon , electron , physics , mathematical analysis , mathematics , quantum mechanics
A pn heterojunction C-V technique used to determine the bandgap of SiGe strained layers is presented in this paper. The SiGe bandgap is analyzed and calculated by acguiring the built-in potential and discontinuities of valence and conduction bands, according to the C-V profile of the stained SiGe/Si pn heterojunction. This technique is much more convenient and the experimental results agree very well with the theoretical and published calculations, indicating that the method is correct. This method is suitable for not only the bandgap of the single SiGe/Si pn heterojunctions, but also that of the SiGe/Si devices with SiGe/Si pn heterojunctions.