Open AccessInfluence of hydrogen-enhanced etching on the quality of diamond films and the existing form of sp2 bonding carbon atoms
Author(s) -
Ma Bing-Xian,
Ning Yao,
Shie Yang,
LU Zhan-ling,
Zhiqin Fan,
Binglin Zhang
Publication year - 2004
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.53.2287
Subject(s) - materials science , carbon film , amorphous carbon , diamond , raman spectroscopy , chemical vapor deposition , carbon fibers , etching (microfabrication) , chemical engineering , microstructure , material properties of diamond , grain boundary , methane , amorphous solid , hydrogen , nanotechnology , thin film , composite material , crystallography , composite number , layer (electronics) , chemistry , optics , organic chemistry , engineering , physics
Diamond thin films were prepared by using chemical vapor deposition. It is enhanced to etch the sp2 bonding carbon atoms of the film by intermittently closing the methane gas during the deposition. These films were characterized by Raman spectroscopy and microscopy. The results show that the enhanced etching of sp2 bonding carbon atoms has no obvious effect on quality and microstructure of the diamond films. It reveals that the sp2 bonding carbon atoms do not mainly exist in graphitic or amorphous carbon grain form in the films but mainly among the carbon atoms of diamond grain surface or grain boundary.