Open AccessLarge optical cavity and small vertical divergence angle semiconductor lasers
Author(s) -
Bifeng Cui,
Jianjun Li,
Deshu Zou,
Peng Lian,
Han Jin-Ru,
Dongfeng Wang,
Du Jinyu,
Lei Ying,
Huimin Zhao,
Shen Guang-di
Publication year - 2004
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.53.2150
Subject(s) - optics , semiconductor laser theory , laser , semiconductor , materials science , divergence (linguistics) , vertical cavity surface emitting laser , optical cavity , optoelectronics , physics , linguistics , philosophy
A novel coupled large optical cavity cascaded by tunnel-junction semiconductor lasers is put forward to resolve the major difficulties of ordinary laser diodes. In this structure several active regions are cascaded by tunnel junctions to couple a large optical cavity. This structure can solve the problem of catastrophic optical damage of facet and large vertical divergence caused by thin emitting area in ordinary laser diodes. The near-field facalur size reaches 1μm. Low-pressure metal-organic chemical vapor deposition is adopted to grow the novel semiconductor lasers. Slope efficiency as high as 0.80W/A per facet and vertical divergence angle of 20°and threshold current density of 277 A/cm2 are achieved from an uncoated novel laser device.