Open AccessInvestigation of defect properties in doped diamond films
Author(s) -
Xiaojun Hu,
Rongbin Li,
Shen He-Sheng,
Xiancong He,
Deng Wen,
Luo Li-Xiong
Publication year - 2004
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.53.2014
Subject(s) - diamond , materials science , electron paramagnetic resonance , chemical vapor deposition , dangling bond , dopant , doping , boron , material properties of diamond , carbon fibers , paramagnetism , condensed matter physics , optoelectronics , nuclear magnetic resonance , silicon , composite material , chemistry , physics , organic chemistry , composite number
The defect properties in chemical vapor deposition diamond films doped by sulfur and boron were investigated by the Doppler broadening measurements and electron paramagnetic resonance (EPR). The results show that the defects annihilating the positrons is almost the same in various doped films, and the interactions between the dopants and the positrons are not distinct. In addition, a small amount of boron atoms can improve the quality of diamond films. The EPR signals of the diamond films arise from carbon dangling bonds.