Test methods of total dose effects in verylarge scale integrated circuits | Zendy

Chaohui He | Zendy; Bin Geng | Zendy; He Baoping | Zendy; Yao Yu-Juan | Zendy; Yonghong Li | Zendy; Peng Honglun | Zendy; Dongsheng Lin | Zendy; Hui Zhou | Zendy; Yu-Sheng Chen | Zendy

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Test methods of total dose effects in verylarge scale integrated circuits

Author(s) -

Chaohui He,

Bin Geng,

He Baoping,

Yao Yu-Juan,

Yonghong Li,

Peng Honglun,

Dongsheng Lin,

Hui Zhou,

Yu-Sheng Chen

Publication year - 2004

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.53.194

Subject(s) - very large scale integration , flash (photography) , electronic circuit , computer science , integrated circuit , electronic engineering , electrical engineering , embedded system , physics , engineering , optics , operating system

A kind of test method of total dose effects (TDE) is presented for very large scale integrated circuits (VLSI). The consumption current of devices is measured while function parameters of devices (or circuits) are measured. Then the relation between data errors and consumption current can be analyzed and mechanism of TDE in VLSI can be proposed. Experimental results of 60Co γ TDEs are given for SRAMs, EEPROMs, FLASH ROMs and a kind of CPU.

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