Open AccessTest methods of total dose effects in verylarge scale integrated circuits
Author(s) -
He Chaohui,
Biao Geng,
He Bao-Ping,
Yao Yu-Juan,
Yonghong Li,
Peng Honglun,
Lin Dongsheng,
Hui Zhou,
YuSheng Chen
Publication year - 2004
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.53.194
Subject(s) - very large scale integration , flash (photography) , electronic circuit , computer science , integrated circuit , electronic engineering , electrical engineering , embedded system , physics , engineering , optics , operating system
A kind of test method of total dose effects (TDE) is presented for very large scale integrated circuits (VLSI). The consumption current of devices is measured while function parameters of devices (or circuits) are measured. Then the relation between data errors and consumption current can be analyzed and mechanism of TDE in VLSI can be proposed. Experimental results of 60Co γ TDEs are given for SRAMs, EEPROMs, FLASH ROMs and a kind of CPU.