Open AccessPulse laser crystallization of silicon carbon thin films
Author(s) -
Wei Yu,
Jie He,
Yali Sun,
Zhu Hai-feng,
Han Li,
Guangsheng Fu
Publication year - 2004
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.53.1930
Subject(s) - materials science , raman spectroscopy , silicon , crystallization , thin film , laser , annealing (glass) , pulsed laser deposition , carbon film , excimer laser , amorphous silicon , raman scattering , optoelectronics , amorphous carbon , amorphous solid , nanocrystalline silicon , analytical chemistry (journal) , optics , crystalline silicon , nanotechnology , chemical engineering , composite material , crystallography , chemistry , physics , chromatography , engineering
The pulsed laser crystallization of amorphous silicon carbon (aSiC) thin films have been implemented by using XeCl excimer laser. The aSiC thin films were prepared on silicon and quartz substrates by pulsed laser deposition. The surface morphology, atomic order and phase of the asdeposited and post annealing films have been analyzed by atomic force microscopy (AFM) and Raman scattering spectroscopy. AFM results show that aSiC films can be nanocrystallized at a proper laser energy. The size of nanocrystals in the post annealing films increases with the laser energy density; the separation into crystalline silicon and carbon after laser annealing is identified through Raman analysis. The mechanism of the pulsed laser crystallization of aSiC films is discussed to account for the post annealing characteristics.