Open AccessAnnealing effect on the photoluminescence and dangling bonddensity in erbium-doped hydrogenated amorphous silicon
Author(s) -
Zhao Qian,
Bo Wang,
Yan Hui,
Minoru Kumeda,
Tatsuo Shimizu
Publication year - 2004
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.53.151
Subject(s) - photoluminescence , materials science , annealing (glass) , dangling bond , erbium , doping , amorphous solid , silicon , sputter deposition , amorphous silicon , ion , analytical chemistry (journal) , optoelectronics , sputtering , crystalline silicon , nanotechnology , thin film , crystallography , composite material , chemistry , organic chemistry , chromatography
In this paper, Er photoluminescence(PL) of Er-doped a-Si:H films, prepared by rf magnetron co-sputtering with various densities of Si dangling bonds(DBs), was studied with structure modification resulting from post annealing at a temperature range of 200-500℃. It was unexpectedly found that, the intensity of the Er-PL continually increases with annealing temperature below 350℃, meanwhile the density of Si-DBs decreases up to 250℃ due to the structural relaxation but then increases up to 500℃ probably due to Si-H being broken. Since the Er3+ ion transition depends on the symmetry of the Er3+ site in the host. The increase in the Er-PL intensity against the decrease of the density of Si-DBs is probably attributed to a change in the environment of Er3+ ions during annealing.