Annealing effect on the photoluminescence and dangling bonddensity in erbium-doped hydrogenated amorphous silicon | Zendy

Zhao Qian | Zendy; Bo Wang | Zendy; Hui Yan | Zendy; M. Kumeda | Zendy; Tomohiro Shimizu | Zendy

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Annealing effect on the photoluminescence and dangling bonddensity in erbium-doped hydrogenated amorphous silicon

Author(s) -

Zhao Qian,

Bo Wang,

Hui Yan,

M. Kumeda,

Tomohiro Shimizu

Publication year - 2004

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.53.151

Subject(s) - photoluminescence , materials science , annealing (glass) , dangling bond , erbium , doping , amorphous solid , silicon , sputter deposition , amorphous silicon , ion , analytical chemistry (journal) , optoelectronics , sputtering , crystalline silicon , nanotechnology , thin film , crystallography , composite material , chemistry , organic chemistry , chromatography

In this paper, Er photoluminescence(PL) of Er-doped a-Si:H films, prepared by rf magnetron co-sputtering with various densities of Si dangling bonds(DBs), was studied with structure modification resulting from post annealing at a temperature range of 200-500℃. It was unexpectedly found that, the intensity of the Er-PL continually increases with annealing temperature below 350℃, meanwhile the density of Si-DBs decreases up to 250℃ due to the structural relaxation but then increases up to 500℃ probably due to Si-H being broken. Since the Er3+ ion transition depends on the symmetry of the Er3+ site in the host. The increase in the Er-PL intensity against the decrease of the density of Si-DBs is probably attributed to a change in the environment of Er3+ ions during annealing.

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