Thickness measurement of GaN film based on transmission spectra | Zendy

Jincheng Zhang | Zendy; Yue Hao | Zendy; Peixian Li | Zendy; Long Fan | Zendy; Feng Qian | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Thickness measurement of GaN film based on transmission spectra

Author(s) -

Jincheng Zhang,

Yue Hao,

Peixian Li,

Long Fan,

Feng Qian

Publication year - 2004

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.53.1243

Subject(s) - materials science , epitaxy , interference (communication) , refractive index , spectral line , crystal (programming language) , optoelectronics , transmission (telecommunications) , optics , wavelength , physics , computer science , nanotechnology , telecommunications , layer (electronics) , channel (broadcasting) , astronomy , programming language

By analyzing the transmission spectra of hetero-epitaxial GaN films on sapphires, a film thickness measurement method is presented. The method uses the interference effect of the crystal film and considers the effect of the refractive index n on the photon wavelength. Applications of it show that the method is a rapid and precise one for measuring the film thickness of GaN crystals.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research