Open AccessThickness measurement of GaN film based on transmission spectra
Author(s) -
Jincheng Zhang,
Hao Yue,
Peixian Li,
Fan Li,
Feng Qian
Publication year - 2004
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.53.1243
Subject(s) - materials science , epitaxy , interference (communication) , refractive index , spectral line , crystal (programming language) , optoelectronics , transmission (telecommunications) , optics , wavelength , physics , computer science , nanotechnology , telecommunications , layer (electronics) , channel (broadcasting) , astronomy , programming language
By analyzing the transmission spectra of hetero-epitaxial GaN films on sapphires, a film thickness measurement method is presented. The method uses the interference effect of the crystal film and considers the effect of the refractive index n on the photon wavelength. Applications of it show that the method is a rapid and precise one for measuring the film thickness of GaN crystals.