Open AccessEffect of inner electric field on the photoluminescence spectrum of nanosilicon
Author(s) -
Huang Kai,
Sihui Wang,
Shaohua Yi,
Qin Guo-Yi,
Rong Zhang,
Youdou Zheng
Publication year - 2004
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.53.1236
Subject(s) - photoluminescence , materials science , electric field , luminescence , optoelectronics , recombination , physics , quantum mechanics , biochemistry , chemistry , gene
Based on the quantum confinement-luminescence center model, the relation between the inner electric field (IEF) and the photoluminescence(PL) character is calculated. Results show that the IEF between nanosilicon and luminescence centers (LCs) can have a strong effect on the carrier recombination rate and the spectrum peak position swinging. In the range from 2 to 5 nm, the carrier recombination rate at the LCs is much bigger than the rates of recombination inside the nanosilicon. And dut to the presence of IEF between nanosilicon and LCs, the PL intensity at the LCs and inside nanosilicon will reduce remarkably.