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Hole storage characteristics in Ge/Si hetero-nanocrystal-based memories
Author(s) -
Yang Hong-guan,
Yi Shi,
Lü Jin,
Pu Lin,
Rong Zhang,
Zheng You-Dou
Publication year - 2004
Publication title -
acta physica sinica
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.53.1211
Subject(s) - nanocrystal , materials science , germanium , nanotechnology , optoelectronics , engineering physics , silicon , physics

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