Open AccessStudy on the kink effect in AlGaAs/InGaAs/GaAs PHEMTs
Author(s) -
Hongxia Liu,
Yue Hao,
Tao Zhang,
Xuefeng Zheng,
Ma Xiao-Hua
Publication year - 2003
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.52.984
Subject(s) - materials science , high electron mobility transistor , impact ionization , optoelectronics , trapping , doping , schottky barrier , schottky diode , transistor , electron , gallium arsenide , ionization , electrical engineering , chemistry , physics , ion , voltage , ecology , organic chemistry , diode , quantum mechanics , biology , engineering
In this paper, two-dimensional devices simulation program-MEDICI has been used to simulate AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors (PHEMTs). Doping and electron concentrations, current flow and gate characteristic in PHEMTs are studied. The kink effect in PHEMTs is investigated emphatically as a function of temperature and doping concentration of Schottky layer. The results show that the kink effect is related mainly to the trapping/detrapping process of deep levels that lie in the top layers but not related to the impact ionization alone.