Open AccessStructural and photoluminesenct properties of Zn1-xMgxO thin film on silicon
Author(s) -
Zhonghua Lu,
Lei Wang,
Huang Jing-yun,
Zhao Bing-hui,
Zhizhen Ye
Publication year - 2003
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.52.935
Subject(s) - materials science , thin film , photoluminescence , pulsed laser deposition , diffraction , substrate (aquarium) , transmission electron microscopy , full width at half maximum , band gap , optoelectronics , silicon , optics , analytical chemistry (journal) , nanotechnology , chemistry , oceanography , physics , chromatography , geology
High-quality Zn1-xMgxO thin film was grown on Si substrate by pulsed laser deposition (PLD). x-ray diffraction patterns indicated that the film was c-axis oriented, the full width at half maximum of (002) peak was only 0.211°, and no phase separation was observed. Transmission electron microscopy(TEM) verified the c-axis orientation of the Zn1-xMgxO thin film. Regular diffraction spots can be observed by TEM. Photoluminescence spectrum was measured at room temperature. The near-band-energy emission peak of the Zn1-xMgxO thin film has a blue shift of 0.4 eV from that of ZnO, and the ratio of near-band-energy to the defect-level peak intensity was as large as 159. These results indicate that Zn1-xMgxO thin film can have potential applications in optoelectronic devices.