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A study on photoluminescence characterization of high-quality nanocrystalline ZnO thin films
Author(s) -
Xitian Zhang,
Xiao Zhi-Yan,
Weili Zhang,
Gao Hong,
Wang Yu-Xi,
Yichun Liu,
Jiying Zhang,
Xu Wu
Publication year - 2003
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.52.740
Subject(s) - nanocrystalline material , materials science , wurtzite crystal structure , photoluminescence , thin film , crystallite , exciton , chemical vapor deposition , optoelectronics , condensed matter physics , nanotechnology , zinc , metallurgy , physics
In this paper, we report the photoluminescence from high-quality nanocrystalline ZnO thin films. The high-quality nanocrystalline ZnO thin films are prepared by thermal oxidation of ZnS films at 800℃, which are deposited by low-pressure metal-organic chemical vapor deposition technique. X-ray diffraction indicated that the nanocrystalline ZnO thin films have a polycrystalline hexagonal wurtzite structure. A strong ultraviolet emission peak at 3.26 eV was observed and the deep-level emission band was barely observable at room temperature. The strength (ΓLO) of the exciton-longitudinal-optical (LO)-phonon coupling is deduced from the temperature dependence of the full width at half maximum of the fundamental excitonic peak. ΓLO is reduced greatly due to the quantum confinement effect.

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