Average-bond-energy method in Schottky barrier height calculation | Zendy

Shuping Li | Zendy; WANG REN-ZHI | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Average-bond-energy method in Schottky barrier height calculation

Author(s) -

Shuping Li,

WANG REN-ZHI

Publication year - 2003

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.52.542

Subject(s) - semiconductor , materials science , schottky barrier , bond energy , condensed matter physics , metal , dielectric , coincidence , atomic physics , computational physics , physics , quantum mechanics , molecule , optoelectronics , diode , medicine , alternative medicine , pathology , metallurgy

Ten barrier heights of metal-semiconductor contacts are calculated by taking the average-bond-energy as the reference level- The coincidence degree of the calculational values and the experimental values is as good as that of Tersoff's charge-neutrality point method in theoretical calculation of metal-semiconductor contacts- The calculational results are much better than that of Harrison's tight-binding method and Cardona's dielectric midgap energy method-

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research