Open AccessAverage-bond-energy method in Schottky barrier height calculation
Author(s) -
Shuping Li,
Renzhi Wang
Publication year - 2003
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.52.542
Subject(s) - semiconductor , materials science , schottky barrier , bond energy , condensed matter physics , metal , dielectric , coincidence , atomic physics , computational physics , physics , quantum mechanics , molecule , optoelectronics , diode , medicine , alternative medicine , pathology , metallurgy
Ten barrier heights of metal-semiconductor contacts are calculated by taking the average-bond-energy as the reference level- The coincidence degree of the calculational values and the experimental values is as good as that of Tersoff's charge-neutrality point method in theoretical calculation of metal-semiconductor contacts- The calculational results are much better than that of Harrison's tight-binding method and Cardona's dielectric midgap energy method-