Open AccessEffects of substrates on silicon oxide nanowires growth by thermal chemical vapor deposition
Author(s) -
Yan Xiao-Qin,
Zuqin Liu,
Dongsheng Tang,
Lijie Ci,
Dongfang Liu,
Zhenping Zhou,
Liang Ying-Xin,
Yuan Hua-Jun,
Wei Zhou,
Gang Wang
Publication year - 2003
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.52.454
Subject(s) - materials science , silicon , chemical vapor deposition , nanowire , oxide , silicon oxide , wafer , transmission electron microscopy , scanning electron microscope , chemical engineering , amorphous solid , thermal oxidation , nanotechnology , layer (electronics) , optoelectronics , composite material , chemistry , metallurgy , crystallography , silicon nitride , engineering
Silicon oxide nanowires, grown on (100) Si wafers with the oxide layer about 100nm in thickness and on quartz plates, are investigated by exposing to the same conditions in a thermal chemical vapor deposition reactor at a temperature about 860℃. Field-emission scanning electron microscopy, transmission electron microscope equipped with energy-dispersive x-ray analysis were used to characterize the samples. The results show that a large amount of amorphous silicon oxide nanowires was obtained. The morphology, size and chemical composition of the silicon oxide nanowires grown on different substrates are quite different. The reasons of forming different characteristic silicon oxide nanowires were discussed.