Open AccessFormation of self-assembly and the mechanism of Si nanoquantum dots prepared by low pressure chemical vapor deposition
Author(s) -
Ying Peng,
Manabu Ikeda,
S. Miyazaki
Publication year - 2003
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.52.3108
Subject(s) - materials science , chemical vapor deposition , mechanism (biology) , chemical engineering , deposition (geology) , hybrid physical chemical vapor deposition , combustion chemical vapor deposition , chemical physics , vapor pressure , nanotechnology , thin film , carbon film , thermodynamics , chemistry , physics , paleontology , sediment , engineering , biology , quantum mechanics
Si nanoquantum dots have been formed by self-assembled growth on the both Si—O—Si and Si—OH bonds terminated SiO2 surfaces using the low-pressur e chemical vapor deposition (LPCVD) and surface thermal decomposition of pure SiH4 gas. We have experimentally studied the variation of Si dot density with Si—OH bonds density, deposition temperature and SiH4 pressure, and analyzed qu alitatively the formation mechanism of the Si nanoquantum dots based on LPCVD surface thermal dynamics principle. The results are very important for the control of the density and size of Si nanoquantum dots, and have potential applications in the new quantum devices.