Open AccessTrapping effect modeling for SiC power MESFETs
Author(s) -
Yang Lin-An,
Yimen Zhang,
Chunlei Yu,
Yuming Zhang
Publication year - 2003
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.52.302
Subject(s) - mesfet , trapping , transconductance , materials science , conductance , power (physics) , silicon carbide , threshold voltage , voltage , optoelectronics , computational physics , mechanics , condensed matter physics , transistor , physics , thermodynamics , field effect transistor , composite material , ecology , biology , quantum mechanics
An analytical trapping modle, which utilizes concise parameters to describe the impact of deep level traps in the p-buffer layer on the output characteristics, is proposed for 4H-SiC RF power MESFET. This model is simple in calculations compared with normally used 2D numerical model. It also takes into account the self-heating effect that plays an important role in saturated region of I-V characteristics. The description of transconductance degradation, drain conductance decrease and pinch-off voltage dispersion caused by the traps is easily derived by theoretical analysis. The result shows good agreement between simulations and measurements.