Open AccessStructual and optoelectronic properties of polycrystalline silicon thin films p repared by hot-wire chemical vapor deposition at low temperatures
Author(s) -
Liujiu Wang,
Min Zhu,
Fengzhen Liu,
Jinlong Liu,
Han Yi-Qin
Publication year - 2003
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.52.2934
Subject(s) - materials science , chemical vapor deposition , polycrystalline silicon , crystallite , silicon , substrate (aquarium) , thin film , deposition (geology) , composite material , optoelectronics , nanotechnology , thin film transistor , metallurgy , paleontology , oceanography , layer (electronics) , sediment , biology , geology
Polycrystalline silicon thin films were prepared by hot-wire chemical vapor deposition (HWCVD) on glass at 250℃with W or Ta wire as the catalyzers. The structual and optoelectronic properties as functions of the filament temperature, deposition pressure and the filament-substrate distance were studiedand the optimized polycrystalline silicon thin films were obtained with Xc>90% (Xc denotes the crystalline ratio of the film), crystal grain size ab out 30—40nm, Rd≈0.8nm/s, σd about 10-7—10-6 Ω-1cm-1,Ea≈0.5eV and Eopt≤1.3eV.