Open AccessCalculations of the spin-polarization of the electronic current injected from a ferromagnetic metal into a semiconductor
Author(s) -
Tongcang Li,
Zhijing Liu,
Keyi Wang
Publication year - 2003
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.52.2912
Subject(s) - condensed matter physics , ferromagnetism , spin polarization , materials science , semiconductor , polarization (electrochemistry) , metal , current (fluid) , spin (aerodynamics) , biasing , tunnel junction , physics , optoelectronics , quantum tunnelling , chemistry , voltage , electron , thermodynamics , quantum mechanics , metallurgy
In this paper, we calculate the relationships both between the width of the tunnel barrier and the spin-polarization(SP) of the electronic current when it is injected from a ferromagnetic metal into a semiconductor through a tunnel barrier and between the bias and SP. The results agree with the latest experimental results. We found that a moderate bias and tunnel barrier width allow a giant SP and there is little spin injection at very low bias.