Open AccessElectron transport properties of MM-HEMT with varied channel indium contents
Author(s) -
Qiu Zhi-Jun,
Chunping Jiang,
Gui Yong-Sheng,
Shu Xiao-Zhou,
Guo Shao-Ling,
Chu Jun-Hao,
Cui Li-Jie,
Yiping Zeng,
Zhongyi Zhu,
Baoqiang Wang
Publication year - 2003
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.52.2879
Subject(s) - high electron mobility transistor , materials science , indium , electron transport chain , electron mobility , fermi gas , lattice (music) , transistor , condensed matter physics , electron , hall effect , induced high electron mobility transistor , optoelectronics , electrical resistivity and conductivity , physics , chemistry , voltage , quantum mechanics , biochemistry , acoustics
Transport properties of two_dimensional electron gas (2DEG) are crucial to metamorphic high_electron_mobility transistors (MM_HEMT). We have investigated the variations of subband electron mobility and concentration versus temperature from Shubnikov_de Hass oscillations and variable temperature Hall measurements. The results indicate that the electrical performance is the best when the In content is 0.65 in the channel for MM_HEMT. When the In content exceeds 0.65, a large lattice mismatch will cause dislocations and result in the decrease of mobility and the fall of performance in materials and devices.