Investigation on the oxygen contamination in the μc-Si∶H thin film deposited b y VHF-PECVD | Zendy

Yang Hui-Dong | Zendy; Chunya Wu | Zendy; Ying Zhao | Zendy; Xue Jun-Ming | Zendy; Ziyang Hu | Zendy; Shaozhen Xiong | Zendy

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Investigation on the oxygen contamination in the μc-Si∶H thin film deposited b y VHF-PECVD

Author(s) -

Yang Hui-Dong,

Chunya Wu,

Ying Zhao,

Xue Jun-Ming,

Ziyang Hu,

Shaozhen Xiong

Publication year - 2003

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.52.2865

Subject(s) - plasma enhanced chemical vapor deposition , x ray photoelectron spectroscopy , materials science , oxygen , raman spectroscopy , analytical chemistry (journal) , chemical vapor deposition , thin film , infrared spectroscopy , chemical engineering , nanotechnology , optics , chemistry , physics , organic chemistry , chromatography , engineering

Investigations on the oxygen contamination in the μc_Si∶H thin films deposited by very_high_frequency plasma_enhanced chemical_vapor deposition(VHF_PECVD) technique with and without load lock chamber have been reported in this paper. From the results of x_ray photoelectron spectroscopy and Fourier transform infrared absorption measurements, it can be identified that oxygen exists in μc_Si∶H film with different bonding modes, namely Si—O bonding, O—H bonding and O—O b onding. In addition, the influences of oxygen on the structural and electrical p roperties of the films are studied with Raman spectra, conductivity(σ) and acti vation energy (Ea) measurements. The results reveal that structural propertie s of the μc_Si∶H film depend strongly on the bonding modes of the existing oxy gen. The electrical properties show that the role of oxygen in μc_Si∶H films i s different from those in a_Si∶H and the essential mechanism needs to be furthe r explored.

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