Open AccessInvestigation on the oxygen contamination in the μc-Si∶H thin film deposited b y VHF-PECVD
Author(s) -
Huabo Yang,
Chen Wu,
Ying Zhao,
Xue Jun-Ming,
Xin Geng,
Xiong Shao-Zhen
Publication year - 2003
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.52.2865
Subject(s) - plasma enhanced chemical vapor deposition , x ray photoelectron spectroscopy , materials science , oxygen , raman spectroscopy , analytical chemistry (journal) , chemical vapor deposition , thin film , infrared spectroscopy , chemical engineering , nanotechnology , optics , chemistry , physics , organic chemistry , chromatography , engineering
Investigations on the oxygen contamination in the μc_Si∶H thin films deposited by very_high_frequency plasma_enhanced chemical_vapor deposition(VHF_PECVD) technique with and without load lock chamber have been reported in this paper. From the results of x_ray photoelectron spectroscopy and Fourier transform infrared absorption measurements, it can be identified that oxygen exists in μc_Si∶H film with different bonding modes, namely Si—O bonding, O—H bonding and O—O b onding. In addition, the influences of oxygen on the structural and electrical p roperties of the films are studied with Raman spectra, conductivity(σ) and acti vation energy (Ea) measurements. The results reveal that structural propertie s of the μc_Si∶H film depend strongly on the bonding modes of the existing oxy gen. The electrical properties show that the role of oxygen in μc_Si∶H films i s different from those in a_Si∶H and the essential mechanism needs to be furthe r explored.