Open AccessStructure and infrared absorption characterizations of yttrium silicides formed by ion beam synthesis
Author(s) -
Wenwu Wang,
Erqing Xie,
Deyan He
Publication year - 2003
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.52.233
Subject(s) - materials science , infrared , infrared spectroscopy , yttrium , analytical chemistry (journal) , rutherford backscattering spectrometry , transmittance , absorption (acoustics) , fourier transform infrared spectroscopy , ion beam , wafer , ion , irradiation , absorption spectroscopy , thin film , optics , chemistry , optoelectronics , nanotechnology , oxide , physics , organic chemistry , chromatography , nuclear physics , metallurgy , composite material
Buried hexagonal YSi2 layers were formed using 100 keV yttrium ions to a dose of 1×1018 Y+cm-2 implanted into (111) oriented silicon wafers by a metal vapor vacuum arc ion source. The structure and infrared absorption spectra of the compound layers have been investigated by x-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS) and Fourier transform infrared (FT-IR) transmittance spectrometry. It was shown that YSi2 has been directly formed during the implantation. A tendency of preferred growth was found in the following process of infrared irradiation. RBS measurements revealed that, after infrared irradiation, the average atomic density ratio of Si to Y in the buried layers decreases from 24 down to around 20, which is close to the stoichiometry of hexagonal YSi2. The characteristic vibration absorption spectra of the silicides have been obtained by FT-IR transmittance measurements.