A novel,yet direct,parameter-extraction method for heterojuction bipolar transis tors small-signal model | Zendy

Haiwen Liu | Zendy; Sun Xiaowei | Zendy; Zhiqun Cheng | Zendy; Che Yan-feng | Zendy; ZhengFan Li | Zendy

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A novel,yet direct,parameter-extraction method for heterojuction bipolar transis tors small-signal model

Author(s) -

Haiwen Liu,

Sun Xiaowei,

Zhiqun Cheng,

Che Yan-feng,

ZhengFan Li

Publication year - 2003

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.52.2298

Subject(s) - equivalent circuit , admittance , small signal model , electrical impedance , signal (programming language) , computer science , inductance , bipolar junction transistor , parasitic element , algorithm , transistor , materials science , voltage , physics , optoelectronics , programming language , quantum mechanics

An accurate and broad-band method for heterojuction bipolar transistors(HBT) small-signal model parameters is presented in this paper.This method differs from previous ones by extracting the equivalent-circuit parameters without using spec ial test structure or global numerical optimization techniques.The main advantag e of this method is that a unique and physically meaningful set of intrinsic par ameters is extracted from impedance and admittance representation of the measure d S-parameters in the frequency range of 0.5—12GHz under different bias conditi ons.An equivalent circuit for the HBT under a forward-bias condition is proposed for extraction of access resistance and parasitic inductance.The method yields a deviation of less then 5% between measured and modeled S-parameters.

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