Open AccessA novel,yet direct,parameter-extraction method for heterojuction bipolar transis tors small-signal model
Author(s) -
Haiwen Liu,
Xiao Wei Sun,
Zhiqun Cheng,
Che Yan-feng,
ZhengFan Li
Publication year - 2003
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.52.2298
Subject(s) - equivalent circuit , admittance , small signal model , electrical impedance , signal (programming language) , computer science , inductance , bipolar junction transistor , parasitic element , algorithm , transistor , materials science , voltage , physics , optoelectronics , programming language , quantum mechanics
An accurate and broad-band method for heterojuction bipolar transistors(HBT) small-signal model parameters is presented in this paper.This method differs from previous ones by extracting the equivalent-circuit parameters without using spec ial test structure or global numerical optimization techniques.The main advantag e of this method is that a unique and physically meaningful set of intrinsic par ameters is extracted from impedance and admittance representation of the measure d S-parameters in the frequency range of 0.5—12GHz under different bias conditi ons.An equivalent circuit for the HBT under a forward-bias condition is proposed for extraction of access resistance and parasitic inductance.The method yields a deviation of less then 5% between measured and modeled S-parameters.