Open AccessNumerical simulation of nc-Si:H/ c-Si heterojunction solar cells
Author(s) -
胡志华,
廖显伯,
曾湘波,
徐艳月,
张世斌,
刁宏伟,
孔光临
Publication year - 2003
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.52.217
Subject(s) - materials science , open circuit voltage , solar cell , short circuit , photovoltaic system , heterojunction , band offset , optoelectronics , degradation (telecommunications) , silicon , band gap , offset (computer science) , trapping , current density , voltage , electrical engineering , computer science , physics , telecommunications , valence band , ecology , quantum mechanics , biology , programming language , engineering
AMPS simulator, which was developed by Pennsylvania State University, has been used to simulate photovoltaic performances of nc-Si:H/ c-Si solar cells. It is shown that interface states are essential factors prominently influencing open circuit voltages (VOC) and fill factors (FF) of these structured solar cells. Short circuit current density (JSC) or spectral response seems more sensitive to the thickness of intrinsic a-Si:H buffer layers inserted into n+-nc-Si:H layer and p-c-Si substrates. Impacts of bandgap offset on solar cell performances have also been analyzed. As ΔEC increases, degradation of VOC and FF owing to interface states are dramatically recovered. This implies that the interface state cannot merely be regarded as carrier recombination centres, and impacts of interfacial layer on devices need further investigation. Theoretical maximum efficiency of up to 3117%(AM15, 100mW/cm2, 040—11μm) has been obtained with BSF structure, idealized light-trapping effect(RF=0, RB=1) and no interface states.