Open AccessOptical properties of InGaAs self-assembled quantum dots with InAlAs wetting lay er
Author(s) -
Tao Zhu,
Zhang Yuan-Chang,
Bo Xu,
Fengqi Liu,
Zhanguo Wang
Publication year - 2003
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.52.2087
Subject(s) - wetting layer , quantum dot , materials science , laser linewidth , wetting , gallium arsenide , optoelectronics , layer (electronics) , nanotechnology , optics , physics , composite material , laser
A new self-assembled quantum dots system where InGaAs dots are formed on InAlAs wetting layer and embedded in GaAs matrix has been fabricated. The photolumines cence linewidth increases with increasing temperature, which is very different from normal In(Ga)As/GaAs quantum dots. The results are attributed to a higher e nergy of the wetting layer which breaks the carrier transfer channel between dot s and keeps the dots more isolated from each other.