Open AccessEffect of nitrogen on oxygen precipitation in Czochralski silicon during high-te mperature annealing
Author(s) -
Le Jiang,
Deren Yang,
Yu Xue-Gong,
Xiangyang Ma,
Xu Jin,
Duanlin Que
Publication year - 2003
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.52.2000
Subject(s) - annealing (glass) , oxygen , materials science , nucleation , precipitation , nitrogen , silicon , microstructure , analytical chemistry (journal) , metallurgy , chemistry , physics , environmental chemistry , organic chemistry , meteorology
The effect of nitrogen on the oxygen precipitation during high-temperature annea ling in Czochralski silicon was investigated. After annealing under different co nditions, the variation of oxygen precipitation and the bulk microdefects(BMDs) density with annealing time at high temperatures was measured, and transmission electronic microscope was used to observe the microstructure of oxygen precipita tes. It was found that nitrogen doping strongly enhanced oxygen precipitation du ring high-temperature annealing; furthermore, the densities of BMDs in the annea led NCZ samples were higher than those in the corresponding CZ ones. Therefore, it is considered that the nitrogen can react with vacancy and oxygen to form N-V -O complexes to enhance the nucleation of oxygen precipitates, and the oxygen pr ecipitates are plates with strong inner stress.