Open AccessPredicting NMOS device radiation response at different dose rates in γ-ray environment
Author(s) -
Bin He,
Guizhen Wang,
Hui Zhou,
Gong Jiancheng,
Luo Yin-Hong,
Jiang Jinghe
Publication year - 2003
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.52.188
Subject(s) - nmos logic , irradiation , materials science , radiation , threshold voltage , dose rate , linear relationship , radiation damage , voltage , optoelectronics , nuclear medicine , optics , physics , nuclear physics , statistics , transistor , mathematics , medical physics , medicine , quantum mechanics
Linear response theory was used to predict threshold-voltage shifts for CC4007-NMOS device at dose rates of 0.1, 2.3, 44 and 91rad(Si)/s. These predictions were compared with the threshold-voltage shifts obtained after 60Co irradiations actually performed at these dose rates, and the agreement is excellent. Also, we use the linear response theory to predict the response of CC4007-NMOS device during radiation and 25℃ annealling for high and low-dose-rates. According to the predictions, under the same conditions of radiation and annealling, the threshold-voltage shifts caused by high dose-rate irradiation after room temperature annealling were equal to that by low-dose-rate irradiation within the limit of error, but the total times for both were the same. Finally, the failure doses for CC4007-NMOS device at different dose rates of irradiation were predicted also using the linear response theory.